Orientation of graphitic planes during the bias-enhanced nucleation of diamond on silicon: An x-ray absorption near-edge study
نویسندگان
چکیده
The bias-enhanced nucleation of diamond on Si~100! is studied by angle-dependent x-ray absorption near-edge spectroscopy ~XANES!. During diamond nucleation, a graphitic phase is also detected. The angle dependence of the XANES signal shows that the graphitic basal planes are oriented perpendicular to the surface. Implications of this result on the mechanism of bias-enhanced nucleation are discussed. © 1998 American Institute of Physics. @S0003-6951~98!01646-5#
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